s m d ty p e m osf e t 1 w w w . kexin . com . c n f e a tu r e s t r en c hm o s ? t ec hn ol og y v er y fa s t s wi t c h i ng lo gi c l ev el c o mp at i bl e s ub m i n i at ur e s ur fa c e m ou nt p ac k ag e. a b so lut e m a xim u m ra tin g s t a = 2 5 s y m bo l rat i ng un i t v d s 50 v g s 20 17 3 11 0 i d m 70 0 p o wer di s s i p at i on t a = 2 5 p d 0. 83 w r t h ja 35 0 r t h jp 15 0 t j , t st g 5+ 1 50 v o pe r at i ng a nd s to r a ge j un c ti on t em pe r at u r e r a ng e t he r m a l r es i s t an c e f r o m j un c ti on to s ol de r p o i n t k /w t a = 1 00 i d m a p ar am et er cont i nu ou s dr ai n cur r en t t a = 2 5 m ax i m um j un c ti on - to - a m b i en t dr ai n - s ou r c e v ol ta g e g at e- s ou r c e v ol t ag e p u l s ed dr a i n cur r e nt d g s - 6 n- ch an n el m osf et bs n20 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 f e a tu r e s
s m d ty p e m o s f e t 2 w w w . k e x i n . c o m . c n e le ct r ica l ch a r a ct e r is t ic s t a = 2 5 p ar am ete r s y m bo l t es tc on di t on s mi n t y p ma x uni t dr ai n - s ou r c e b r e ak do wn v ol tag e v ( b r ) d s s v g s = 0 v , i d = 1 0 a 5 0 g ate - thr es ho l d v ol tag e v g s ( t h ) v d s = v g s , i d = 1 m a 0.4 g ate - bo d y l ea k ag e l g s s v d s = 0 v , v g s = 20 v 10 0 na v d s = 4 0 v , v g s = 0 v 1 v d s = 4 0 v , v g s = 0 v , t a = 15 0 1 0 v g s = 10 v , i d = 10 0 ma 2.8 1 5 v g s = 5 v , i d = 1 00 m a 3.8 2 0 f or war d t r an c o nd uc ta nc e g f s v d s = 1 0 v , i d = 10 0 m a 4 0 1 70 m s inp u t c ap a c i tan c e c i ss 1 7 2 5 o utp ut c ap ac i tan c e c o s s 7 1 5 rev er s e tr an s fer c ap ac i ta nc e c r s s 4 8 t ur n- on t i me t d ( 0 n ) 1.7 8 t ur n- off t i m e t d ( o f f ) 8 1 5 rev er s e r ec ov e r y ti me tr r 3 0 rec ov er ed c ha r g e q r r 3 0 nc di o de f or wa r d v o l ta ge v s d i s = 18 0 m a , v g s = 0 v 0.9 1.5 v i s = 18 0 ma ;di /d t= 10 0a / s ;v g s = 0 v ; v d s = 2 5v ns ua ? pf dr ai n - s ou r c e o n- r e s i s tan c e i d s s r d s ( 0 n ) v d d = 20 v , r d = 1 80 r g s = 5 0 ? ,v g s = 10 v r g = 50 v d s = 1 0 v , v g s = 0 v , f= 1 m hz v z er o g a te v ol tag e dr ai n c ur r e nt m a r k i n g m a r k i n g 702. n- ch an n el m osf et bs n20 f e a tu r e s 1.5 2
s m d ty p e m os f e t 3 w w w . k e x i n . c o m . c n t y p i c a l c h a r a c t e r i s ti c s v gs 5 v fig 1. normaliz ed total p o wer dissipation as a function of solder point temperatur e . fig 2 . normaliz ed contin uous drain current as a function of solder point temperatur e . t sp = 25 c; i dm is single puls e . fig 3 . saf e operating area; contin uous and peak drain currents as a function of drain-sou r ce v olta g e . 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 p der t sp ( o c) (%) 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 i der (%) t sp ( o c) p d e r p t o t p t o t 25 c ------------------ - - - - 100 % = i d e r i d i d 25 c --------------- - - - - 100 % = 10 -2 10 -1 1 0 1 0 1 1 2 v ds (v) i d (a) d.c. 100 ms 10 ms r dson = v ds / i d 1 ms t p = 10 s 100 s t sp = 25 o c t p t p t p t t = mounted on a metal clad subst r ate . fig 4 . t ransient thermal impedance fr om junction to solder point as a function of pulse duration. 03aa47 z th(j-sp) (k/w) t p t p t p t t = n- ch an n el m osf et bs n20 5 $ $ $6 5 $ $ $6
s m d ty p e m o s f e t w w w . k e x i n . c o m . c n t j = 25 t c j = 25 c and 150 c; v ds i d r dson fig 5 . output c haracteristics: drain current as a function of drain-sour ce v olta g e; typical v alues. fig 6 . t ransf er c haracteristics: drain current as a function of gate-sou r ce v olta g e; typical v alues. t j = 25 c fig 7 . drain-sour ce on-state resistance as a function of drain current; typical v alues. fig 8 . normaliz ed drain-sour ce on-state resistance factor as a function of junction temperatur e . i d (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 6 7 8 9 10 v gs (v) i d (a) v ds > i d x r dson t j = 25 o c 150 o c 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i d (a) r dson (?) v gs = 10v t j = 25 o c 4.5 v 4 v 3.5v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -60 -20 20 60 100 140 180 t j ( o c) a a r d s o n r d s o n 25 c ----------------------- - - - - - = i d = 1 ma; v ds = v gs t j = 25 c; v ds = 5 v fig 9 . gate-sour ce threshold v olta g e as a function of junction temperature . fig 10. sub-threshold drain current as a function of gate-sour ce v olta g e . 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -20 20 60 100 140 180 t j ( o c) v gs(th) (v) typ min 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v gs (v) i d (a) typ min 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 4 n- ch an n el m osf et bs n20 t y p i c a l ch a r a c te r i s i ti c s 5 $ $ $6
s m d ty p e m osf e t 5 w w w . kexin . com . c n t j = 25 c and 150 c; v ds i d r dson v gs = 0 v ; f = 1 mhz fig 11. forwar d transconductance as a function of drain current; typical v alues. fig 12 . input , output and re ver se transf er capacitances as a function of drain-sou r ce v olta g e; typical v alues. g fs (s) 1 10 10 2 10 -1 1 10 10 2 v ds (v) c iss , c oss , c rss (pf) c iss c oss c rss t j = 25 c and 150 c; v gs = 0 v fig 13. sour ce (diode f orwar d) current as a function of sou r ce-drain (diode f orwar d) v olta g e; typical v alues. i s (a) n- ch an n el m osf et bs n20 t y p i c a l ch a r a c te r i s i ti c s
|
